Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy

Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry

We propose and demonstrate a terahertz ~THz! time-domain spectroscopy combined with ellipsometry. The complex optical constants of a Si wafer with low resistivity are deduced from the measurements of the wave forms of reflected sand p-polarized THz pulses without reference measurement. The obtained dispersion of refractive index above ;0.2 THz shows good agreement with that predicted by the Dru...

Guided-wave THz time-domain spectroscopy of highly doped silicon using parallel-plate waveguides

Terahertz Time-Domain Spectroscopy of Metallic Particle Ensembles

The terahertz (THz) frequency range is the region of the electromagnetic spectrum between the microwave and optical bands spanning from 0.1 THz to 10 THz. Historically, electromagnetic radiation in this frequency range has been inaccessible due to the lack of widespread electronic or laser-based radiation sources. Electronic radiation sources such as crystal oscillators are generally confined t...

Investigation of aqueous alcohol and sugar solutions with reflection terahertz time-domain spectroscopy.

We give a detailed analysis of a general realization of reflection terahertz time-domain spectroscopy. The method is self-referenced and applicable at all incidence angles and for all polarizations of the incident terahertz radiation. Hence it is a general method for the determination of the dielectric properties of especially liquids in environments where transmission measurements are difficul...

Optical phonon dynamics of GaAs studied with time-resolved terahertz spectroscopy.

We investigate the reflection near the reststrahlen band of the optical phonon in bulk GaAs in the time domain, using time-resolved terahertz spectroscopy. We find that the dynamics of the reflection measured for GaAs differs strongly from the reflection dynamics that would be expected for a TO phonon with a frequency-independent dephasing time.